Micron Announces Availability of 30nm DDR3L-RS Products to Enable a New Generation of Intel Ultrabook(TM) and Ultrathin Computing Devices

9/18/2012 3:00 PM EST

Micron Technology, Inc.
Press release

Micron Announces Availability of 30nm DDR3L-RS Products to Enable a New
Generation of Intel Ultrabook(TM) and Ultrathin Computing Devices

Micron is First DRAM Vendor to Receive Intel Validation of This New Category of
Reduced Power in Standby DDR3 Products 

BOISE, Idaho, 2012-09-18 21:00 CEST (GLOBE NEWSWIRE) -- Micron Technology, Inc.
(Nasdaq:MU), one of the world's leading providers of advanced semiconductor
solutions, today announced high-volume availability of 30-nanometer (nm)
reduced-power DDR3L-RS SDRAM for ultrathin computing devices and tablets. The
2-gigabit (Gb) and 4Gb solutions reduce power consumption in standby to provide
longer battery life, while maintaining the high performance and cost
effectiveness of PC DRAM. 

"Micron has been one of the leaders in the development and commercialization of
DDR3L-RS and the introduction of its 30nm product is confirmation of this,"
said Mike Howard, senior principal analyst, DRAM and Memory at IHS iSuppli.
"DDR3L-RS is an excellent option for customers who have tight power budgets and
need high performance at a competitive price. We expect many of the
next-generation ultrathin platforms to take advantage of DDR3L-RS." 

Previously announced as "DDR3Lm," these devices improve overall system power
consumption by reducing self refresh power (IDD6), enabling Micron to provide
chipset vendors, enablers and electronics manufacturers with best-in-class,
reduced-power memory that offers the same performance, quality and reliability
as standard DRAM. DDR3L-RS meets the expanding needs of today's ultrathin
computing and tablet markets and paves the way for enhanced features and
capabilities in products like the Intel Ultrabook device. 

"The feedback from our customers about this new category of DRAM has been
extremely positive," said Robert Feurle, vice president for Micron's DRAM
marketing. "We are pleased to be the leading provider of DRAM solutions which
are enabling the introduction of ultrathin notebooks and tablets that are
thinner, faster and run longer on a single charge." 

Micron's milestone of being the first vendor with DDR3L-RS products to be
validated at Intel is affirmed in a web posting on Intel's site. 

"Micron was the first DRAM supplier validated on the Ivy Bridge platform with
DDR3L-RS, setting the industry standard for reduced standby PC DRAM," said Geof
Findley, Memory Enabling Senior Manager at Intel. 

In addition to the 2Gb and 4Gb devices, Micron has begun sampling 8Gb x 32
DDR3L-RS and is delivering samples of 8Gb x 16 DDR3L-RS; production is slated
for December 2012. These products offer additional system design flexibility by
reducing board space and increasing density. Additional power and footprint
savings are expected with the launch of DDR4-RS in early 2013. 

With this announcement Micron is well-positioned to support the growth of
ultrathin applications with its broad portfolio of DRAM, NAND, NOR and SSD
solutions. For more information, please visit www.micron.com. 

The Micron Technology, Inc. logo is available at
http://www.globenewswire.com/newsroom/prs/?pkgid=6950 


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